NDP7052 Datasheet - Fairchild

NDP7052, N-Channel Enhancement Mode Field Effect Transistor

June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* 75 A, 50 V. RDS(ON) = 0.01 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely

NDP7052_FairchildSemiconductor.pdf