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NDP7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number
NDP7061L
Manufacturer
Fairchild
File Size
359.68 KB
Datasheet
NDP7061L_FairchildSemiconductor.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 60 A, 60 V. RDS(ON) = 0.018 Ω @ VGS= 5 V RDS(ON) = 0.013 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperatur

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