* 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million
NDP708AE
Fairchild
74.91 KB
N-channel enhancement mode field effect transistor.
May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor
General D.
📁 Related Datasheet
NDP708A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP708B N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP708BE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7050 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7051 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7052 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP7060 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
