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NDT3055L

N-Channel MOSFET

NDT3055L Features

* 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Sup

NDT3055L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand .

NDT3055L Datasheet (228.11 KB)

Preview of NDT3055L PDF

Datasheet Details

Part number:

NDT3055L

Manufacturer:

Fairchild

File Size:

228.11 KB

Description:

N-channel mosfet.

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NDT3055L N-Channel MOSFET Fairchild

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