Datasheet4U Logo Datasheet4U.com

NDT3055L - N-Channel MOSFET

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 S G D S G SOT-223.
  • (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor ON Semiconductor
NDT3055L N-Channel MOSFET VBsemi
NDT3055 N-Channel Enhancement Mode Field Effect Transistor ON Semiconductor
NDT014 N-Channel MOSFET VBsemi
NDT01N60 N-Channel Power MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
NDT3055 N-Channel MOSFET
NDT014 N-Channel MOSFET
NDT014L N-Channel MOSFET
NDT2955 P-Channel MOSFET
NDT410EL N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V.
Published: |