NDT3055 Description
These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in−line...
NDT3055 Key Features
- 4 A, 60 V
- RDS(ON) = 0.100 W @ VGS = 10 V
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used
- This is a Pb-Free Device