NDT3055 - N-Channel MOSFET

Product Overview

Fairchild

Part number	NDT3055
Manufacturer	Fairchild
File Size	226.27 KB
Description	N-Channel MOSFET
Datasheet	NDT3055 Datasheet
Additional preview pages of the NDT3055 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D G SOT-223 G D S S SOT-223.
(J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted NDT3055 60 ±20 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maxim.

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Published: May 12, 2005 |