NDT3055 Datasheet | Fairchild Semiconductor

May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Super SOTTM-3 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 S D G SOT-223 S SOT-223-...