NDT3055L Overview
This Logic Level N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. This device is particularly suited for low voltage applications such...
NDT3055L Key Features
- 4 A, 60 V
- RDS(ON) = 0.100 W @ VGS = 10 V
- RDS(ON) = 0.120 W @ VGS = 4.5 V
- Low Drive Requirements Allowing Operation Directly from Logic
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used
- This is a Pb-Free Device
