NDT3055L Datasheet | onsemi

Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect General Description This Logic Level N- Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in- line power loss, and resistance to transients are needed. Features - 4 A, 60 V - RDS(ON) = 0.100 W @ VGS = 10 V - RDS(ON) = 0.120 W @ VGS = 4.5 V - Low Drive Requirements Allowing Operation Directly from Logic Drivers. VGS(TH) < 2V. - High Density Cell Design for Extremely Low RDS(ON). - High Power and Current Handling Capability in a Widely Used Surface Mount Package. - This is a Pb- Free...