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NDT3055L - N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

This Logic Level N

transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance and provide superior switching performance, and

Key Features

  • 4 A, 60 V.
  • RDS(ON) = 0.100 W @ VGS = 10 V.
  • RDS(ON) = 0.120 W @ VGS = 4.5 V.
  • Low Drive Requirements Allowing Operation Directly from Logic Drivers. VGS(TH) < 2V.
  • High Density Cell Design for Extremely Low RDS(ON).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number NDT3055L
Manufacturer onsemi
File Size 199.13 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDT3055L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect NDT3055L General Description This Logic Level N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. This device is particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in−line power loss, and resistance to transients are needed. Features • 4 A, 60 V ♦ RDS(ON) = 0.100 W @ VGS = 10 V ♦ RDS(ON) = 0.120 W @ VGS = 4.