Part number:
SSH10N60B
Manufacturer:
Fairchild
File Size:
680.51 KB
Description:
600v n-channel mosfet.
* 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! TO-3P G DS SSH Series ! S Absolute Maximum
SSH10N60B Datasheet (680.51 KB)
SSH10N60B
Fairchild
680.51 KB
600v n-channel mosfet.
📁 Related Datasheet
SSH10N60A advanced power MOSFET (Fairchild)
SSH10N70 N-Channel Power MOSFET (Samsung)
SSH10N80 (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
SSH10N80A Advanced Power MOSFET (Samsung)
SSH10N80A N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSH10N90A Advanced Power MOSFET (Samsung Electronics)
SSH10N90A N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
SSH11N90 N-Channel Power MOSFET (Samsung)
SSH20N50 (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
SSH20N50 N-Channel Power MOSFETs (Taitron Components)