SSH10N60B Datasheet, Mosfet, Fairchild

SSH10N60B Features

• Mosfet
• 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanch

PDF File Details

Part number:

SSH10N60B

Manufacturer:

Fairchild

File Size:

680.51kb

Download:

📄 Datasheet

Description:

600v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

TAGS

SSH10N60B

Fairchild

📁 Related Datasheet

SSH10N60A - advanced power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N70 - N-Channel Power MOSFET (Samsung)
.. .. .. .

SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)
.. .. .. .

SSH10N80A - Advanced Power MOSFET (Samsung)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

SSH10N80A - N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Exten.

SSH10N90A - Advanced Power MOSFET (Samsung Electronics)
.. .. .. .

SSH10N90A - N-CHANNEL POWER MOSFET (Fairchild Semiconductor)
N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc.

SSH11N90 - N-Channel Power MOSFET (Samsung)
Free Datasheet http://..net/ Free Datasheet http://..net/ Free Datasheet http://..net/ Free Datasheet htt.

SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
.

SSH20N50 - N-Channel Power MOSFETs (Taitron Components)
N-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS (V) IRFP150 SSH60N10 IRFP250 S.