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SSH10N60A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET.

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ. ) SSH10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 oC ) Dra.

More Datasheets from Fairchild (now onsemi)

Part Number Description
SSH10N60B 600V N-Channel MOSFET
SSH7N90A N-Channel Power Mosfets

SSH10N60A Distributor