SSH10N60A Datasheet | Fairchild Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) BVDSS = 600 V RDS(on) = 0.8 Ω ID = 10 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 o C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25o C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 600 10 6.3 40 + _ 30 545 10 19.3 3.0 193 1.54 - 55 to +150 Units V A A V m J A m J V/ns W W/ o C O 1 O 1 O 3 O 2 o Thermal Resistance Symbol R R θJC θCS Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -- Max. 0.65 -40 Units o C /W R θJA Rev. B ©1999 Fairchild Semiconductor Corporation Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.66 ------8.5 190 78 20 23 85 30 74 12 35.4 --4.0 100 -100 25 250 0.8 -220 90 50 55 180 70 95 --n C ns µA Ω Ω p F V V n A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25o C unless otherwise specified) Test...