Datasheet4U Logo Datasheet4U.com

SSH10N60B Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! TO-3P G DS SSH Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drai.

More Datasheets from Fairchild (now onsemi)

Part Number Description
SSH10N60A advanced power MOSFET
SSH7N90A N-Channel Power Mosfets

SSH10N60B Distributor