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12N60C3D HGTG12N60C3D

12N60C3D Description

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo.

12N60C3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

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HGTG12N60C3D Fairchild Semiconductor
Fairchild Semiconductor 12N60C3D-like datasheet