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2N5830 - NPN General Purpose Amplifier

2N5830 Description

2N5830 Discrete POWER & Signal Technologies 2N5830 C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose high vol.

2N5830 Applications

* involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5830 625 5.0 83.3 200 Units mW

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Datasheet Details

Part number
2N5830
Manufacturer
Fairchild Semiconductor
File Size
24.94 KB
Datasheet
2N5830_FairchildSemiconductor.pdf
Description
NPN General Purpose Amplifier

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NPN General Purpose Amplifier Fairchild Semiconductor
Fairchild Semiconductor 2N5830-like datasheet