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33N10 - FQP33N10

Fairchild Semiconductor

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Datasheet Details

Part number: 33N10
Manufacturer: Fairchild Semiconductor
File Size: 572.41 KB
Datasheet: 33N10-FairchildSemiconductor.pdf
Description: FQP33N10

33N10 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

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Published: Jun 22, 2014 |