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BSV52 - NPN Transistor

BSV52 Description

BSV52 BSV52 C E SOT-23 Mark: B2 B NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10.

BSV52 Applications

* involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max
* BSV52 225 1.8 556 Units mW mW/°C °C/W
* Device mounted on FR-4 PC

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Fairchild Semiconductor BSV52-like datasheet