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FQE10N20C 200V N-Channel MOSFET

FQE10N20C Description

FQE10N20C FQE10N20C 200V N-Channel MOSFET QFET® General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQE10N20C Features

* 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
* Low gate charge ( typical 20 nC)
* Low Crss ( typical 40.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability GD S TO-126 FQE Series G! D !
* ◀▲
* ! S Absolute Maximum

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200V N-Channel MOSFET Fairchild Semiconductor
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