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IRFBC40 N-Channel Power MOSFET

IRFBC40 Description

IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transist.

IRFBC40 Features

* 6.2A, 600V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* Simple Drive Requirements
* Ease of Paralleling
* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART

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Datasheet Details

Part number
IRFBC40
Manufacturer
Fairchild Semiconductor
File Size
91.86 KB
Datasheet
IRFBC40-FairchildSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFBC40-like datasheet