Datasheet4U Logo Datasheet4U.com

IRFI614A - Power MOSFET

IRFI614A Description

$GYDQFHG 3RZHU 026)(7 IRFW/I614A .

IRFI614A Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 250V
* Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Rati

📥 Download Datasheet

Preview of IRFI614A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFI614G - Power MOSFET (International Rectifier)
  • IRFI614GPBF - Power MOSFET (International Rectifier)
  • IRFI610A - Power MOSFET (Samsung)
  • IRFI620G - Power MOSFET (International Rectifier)
  • IRFI624G - Power MOSFET (International Rectifier)
  • IRFI624GPBF - Power MOSFET (International Rectifier)
  • IRFI630 - Power MOSFET (International Rectifier)
  • IRFI630A - Power MOSFET (Samsung)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI614A-like datasheet