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IRFI630B, IRFW630B - N-Channel MOSFET

IRFI630B Description

IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFI630B, IRFW630B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFI630B, IRFW630B
Manufacturer
Fairchild Semiconductor
File Size
671.69 KB
Datasheet
IRFW630B_FairchildSemiconductor.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFI630B, IRFW630B.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI630B-like datasheet

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