Datasheet4U Logo Datasheet4U.com

IRFZ14 Power MOSFET

IRFZ14 Description

$GYDQFHG 3RZHU 026)(7 .

IRFZ14 Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 175°C Operating Temperature
* Lower Leakage Current: 10µA (Max. ) @ VDS = 60V
* Lower RDS(ON):

📥 Download Datasheet

Preview of IRFZ14 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFZ14A - Power MOSFET (Samsung)
  • IRFZ14L - Power MOSFET (International Rectifier)
  • IRFZ14S - Power MOSFET (International Rectifier)
  • IRFZ10 - HEXFET Power MOSFET (International Rectifier)
  • IRFZ20 - (IRFZ20 / IRFZ22) HEXFET TRANSISTORS (International Rectifier)
  • IRFZ22 - (IRFZ20 / IRFZ22) HEXFET TRANSISTORS (International Rectifier)
  • IRFZ24 - Power MOSFET (International Rectifier)
  • IRFZ24L - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFZ14-like datasheet