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P6N70A SSP6N70A

P6N70A Description

Advanced Power MOSFET .

P6N70A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source

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Fairchild Semiconductor P6N70A-like datasheet