Datasheet4U Logo Datasheet4U.com

LPV3000 - 2W Power PHEMT

LPV3000 Description

Filtronic Solid State .
AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LPV3000 Features

* DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT
* +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD

LPV3000 Applications

* The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and g

📥 Download Datasheet

Preview of LPV3000 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • LPV321 - Rail-to-Rail Output Operational Amplifiers (National Semiconductor)
  • LPV321-N - Single General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LPV324 - Rail-to-Rail Output Operational Amplifiers (National Semiconductor)
  • LPV324-N - Quad General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LPV358 - Rail-to-Rail Output Operational Amplifiers (National Semiconductor)
  • LPV358-N - Dual General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LPV511 - Rail-to-Rail Input and Output Operational Amplifier (Texas Instruments)
  • LPV521 - Operational Amplifier (Texas Instruments)

📌 All Tags

Power PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPV3000-like datasheet