MD8IC970GNR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MD8IC970GNR1, RF LDMOS Wideband Integrated Power Amplifiers

10 μF, 50 V Chip Capacitors 1 μF, 50 V Chip Capacitors 3.3 pF Chip Capacitors 39 pF Chip Capacitors 47 pF Chip Capacitors 4.7 pF Chip Capacitors 0.1 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 15 pF Chip Capacitors 4.7 pF Chip Capacitors 2.7 pF Chip Capacitors 5.0 nH 2 Turn Inductors 2.8 nH Chip

Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev.

2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on chip prematching that makes it usable from 136 to 940 MHz.

This multi stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats.

This device has a 2 stage design with off chip matching for the input, interstage and output netwo

MD8IC970GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Prematching. On

* Chip Stabilization.

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)