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MD8IC925GNR1, MD8IC925NR1 RF LDMOS Wideband Integrated Power Amplifiers

MD8IC925GNR1 Description

NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on

MD8IC925GNR1 Features

* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* On
* chip matching (50 Ohm input, DC blocked)
* Integrated quiescent current temperature compensation with Enable/Disable function (1)
* Integrated ESD prot

MD8IC925GNR1 Applications

* 225C capable plastic package Document Number: MD8IC925N Rev. 1, 9/2016 MD8IC925NR1 MD8IC925GNR1 728
* 960 MHz, 2.5 W AVG. , 28 V SINGLE W
* CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO
* 270WB
* 14 PLASTIC MD8IC925NR1 TO
* 270WBG
* 14 PLASTIC MD8IC

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MD8IC925GNR1, MD8IC925NR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MD8IC925GNR1, MD8IC925NR1
Manufacturer
NXP ↗
File Size
791.27 KB
Datasheet
MD8IC925NR1-NXP.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers
Note
This datasheet PDF includes multiple part numbers: MD8IC925GNR1, MD8IC925NR1.
Please refer to the document for exact specifications by model.

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LDMOS Wideband Integrated Power Amplifiers NXP
NXP MD8IC925GNR1-like datasheet