Description
NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on
Features
* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* On
* chip matching (50 Ohm input, DC blocked)
* Integrated quiescent current temperature compensation with
Enable/Disable function (1)
* Integrated ESD prot
Applications
* 225C capable plastic package
Document Number: MD8IC925N Rev. 1, 9/2016
MD8IC925NR1 MD8IC925GNR1
728
* 960 MHz, 2.5 W AVG. , 28 V SINGLE W
* CDMA
RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
TO
* 270WB
* 14 PLASTIC
MD8IC925NR1
TO
* 270WBG
* 14 PLASTIC
MD8IC