MD8IC925NR1 RF LDMOS Wideband Integrated Power Amplifiers

NXP

Description

NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on

📥 Download Datasheet

MD8IC925NR1 Datasheet Preview — Preview of MD8IC925NR1 PDF

Datasheet Specifications

Part number: MD8IC925NR1
Manufacturer: NXP ↗
File Size: 791.27 KB
Datasheet: MD8IC925NR1-NXP.pdf
Description: RF LDMOS Wideband Integrated Power Amplifiers

Features

* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* On
* chip matching (50 Ohm input, DC blocked)
* Integrated quiescent current temperature compensation with Enable/Disable function (1)
* Integrated ESD prot

Applications

* 225C capable plastic package Document Number: MD8IC925N Rev. 1, 9/2016 MD8IC925NR1 MD8IC925GNR1 728
* 960 MHz, 2.5 W AVG. , 28 V SINGLE W
* CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO
* 270WB
* 14 PLASTIC MD8IC925NR1 TO
* 270WBG
* 14 PLASTIC MD8IC

MD8IC925NR1 Distributors

📁 Related Datasheet

MD8IC970GNR1 MD8IC970NR1 MD8001 MD8002 MD8002A MD8003

📌 All Tags

MD8IC925NR1 LDMOS Wideband Integrated Power Amplifiers NXP

NXP MD8IC925NR1-like datasheet

MD8IC925GNR1