MD8IC925NR1 Datasheet (NXP) - RF LDMOS Wideband Integrated Power Amplifiers

MD8IC925NR1, RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on chip matching that makes it usable from 728 to 960 MHz.

This multi stage structure is rated for 24 to 32 V operation and covers all typical cellular base station modulation formats.

Driver Application 900 MHz Typical single carrier W CDMA performance: VDD = 28 Vdc, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Po

MD8IC925NR1 Features

* Characterized with series equivalent large

* signal impedance parameters and common source S

* parameters

* On

* chip matching (50 Ohm input, DC blocked)

* Integrated quiescent current temperature compensation with Enable/Disable function (1)

* Integrated ESD prot