MHV5IC2215NR2 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifier

MHV5IC2215NR2, RF LDMOS Wideband Integrated Power Amplifier

22 pF, 50 V Chip Capacitor 6.8 pF, 50 V Chip Capacitors 1 μF, 35 V Tantalum Chip Capacitors 330 μF, 50 V Electrolytic Chip Capacitors 0.01 μF, 50 V Chip Capacitor 2.7 pF, 50 V Chip Capacitors 15 pF, 25 V Chip Capacitor 1 kW, 1/8 W Chip Resistors Part Number 06033J220GBS 06035J6R8BBS TAJA105K035R MCR

Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev.

3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications.

It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure.

Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz.

The linearity performances cover all modulation formats for cellular applications including TD - SC

MHV5IC2215NR2 Features

* On - Chip Matching (50 Ohm Input, >5 Ohm Output) www.DataSheet4U.com

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)

* Integrated ESD Protection