MHVIC915NR2 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifier

MHVIC915NR2, RF LDMOS Wideband Integrated Power Amplifier

4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 μF X7R Chip Capacitors (1214) 10 μF, 50 V Electrolytic Capacitor 0.01 μF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Part Number ATC600S4R7CW GRM40- 001COG470J050BD G

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev.

9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz.

This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

Final Application Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1

MHVIC915NR2 Features

* 10. Spectral Regrowth @ 400 kHz versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM) SPECTRAL REGROWTH @ 600 kHz (dBc) TC =

* 30_C 25_C 85_C IMD, INTERMODULATION DISTORTION (dBc)

* 76.5

* 77

* 77.5