MHVIC2114R2 Datasheet (Motorola) - RF LDMOS Wideband Integrated Power Amplifier

MHVIC2114R2, RF LDMOS Wideband Integrated Power Amplifier

1 µF Tantalum Chip Capacitors 0.01 µF Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 µF Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8B

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MHVIC2114R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications.

It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.

Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz.

The linearity perfor

MHVIC2114R2 Features

* MHz 2110 2140 2170 Zin Zin Ω 57.9 - j12.1 50.6 - j18.9 42.3 - j21.1 Zload Ω 1.1 + j2.7 1.1 + j3.4 1.2 + j3.7 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figur