MHVIC915 Datasheet (Motorola) - 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

MHVIC915, 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 µF X7R Chip Capacitors (1214) 10 µF, 50 V Electrolytic Capacitor 0.01 µF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Value, P/N or DWG ATC600S4R7CW GRM40 *001C

MOTOROLA Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA Order this document by MHVIC915R2/D The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications.

It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi stage structure.

Its wideband On Chip integral matching circuitry makes it usable from 746 to 960 MHz.

The linea

MHVIC915 Features

* band Performance 33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 26 25 5 10 15 20 3 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25 30 35 Pin = 1 mW 2 mW 32.5 32 G ps , POWER GAIN (dB) 31.5 31 30.5 30 29.5 29 28.5 28 5 10 15 20 0.07 mW Pin = 0.275 mW 0.14 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25