MHVIC2114NR2 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifier

MHVIC2114NR2, RF LDMOS Wideband Integrated Power Amplifier

1 μF Tantalum Chip Capacitors 0.01 μF Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 μF Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8B

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev.

5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications.

It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.

Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz.

The linearity performances cover all modulation formats for cel

MHVIC2114NR2 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

* Integrated Temperature Compensation with Enable/Disable Function

* Integrated ESD Protec