MHVIC2114NR2 RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev.5, 5/2006 RF LDMOS Wideband Integrated Power Amplifie.
1 μF Tantalum Chip Capacitors 0.

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Datasheet Specifications

Part number: MHVIC2114NR2
Manufacturer: Freescale Semiconductor
File Size: 560.84 KB
Datasheet: MHVIC2114NR2_FreescaleSemiconductor.pdf
Description: RF LDMOS Wideband Integrated Power Amplifier

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
* Integrated Temperature Compensation with Enable/Disable Function
* Integrated ESD Protec

Applications

* It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA.

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MHVIC2114NR2 LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor

Freescale Semiconductor MHVIC2114NR2-like datasheet