MW5IC970NBR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband 2-Stage Power Amplifiers

MW5IC970NBR1, RF LDMOS Wideband 2-Stage Power Amplifiers

3.9 pF Chip Capacitor 56 pF Chip Capacitor 39 pF Chip Capacitors 10 µF Chip Capacitors 24 pF Chip Capacitor 15 pF Chip Capacitors 4.7 pF Chip Capacitor 0.4 pF Chip Capacitor 0.015 µF Chip Capacitors 5A Surface Mount Fuse 1A Surface Mount Fuse 681 Ω, Chip Resistors 4.75 kΩ, Chip Resistors 1.21 kΩ, Ch

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev.

0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz.

The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

The device has a 2 - stage design with off - chip matching for the input, interst

MW5IC970NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)

* Integrated ESD Protection