TJ15P04M3 - MOSFETs Silicon P-Channel MOS

Freescale

Datasheet Details

Part number	TJ15P04M3
Manufacturer	Freescale
File Size	294.69 KB
Description	MOSFETs Silicon P-Channel MOS
Datasheet	TJ15P04M3_Freescale.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ene.

📁 TJ15P04M3 Similar Datasheet

Other Datasheets by Freescale

Published: Nov 11, 2013 |