TJ150F06M3L - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TJ150F06M3L
Manufacturer	Toshiba Semiconductor
File Size	278.15 KB
Description	MOSFETs
Datasheet	TJ150F06M3L-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanc.

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Published: Sep 6, 2014 |