Datasheet Specifications
- Part number
- TJ120F06J3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 244.17 KB
- Datasheet
- TJ120F06J3_ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
TJ120F06J3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 * * * *.
Features
* S ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟Applications
* Motor Drive Applications Unit: mm 0.4 ± 0.1 10.0 ± 0.3 1.6 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg RatingTJ120F06J3 Distributors
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