TJ10S04M3L - MOSFETs
TJ10S04M3L Features
* (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source
