TJ10S04M3L Datasheet, Mosfets, Toshiba Semiconductor

TJ10S04M3L Features

• Mosfets (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth =

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Part number:

TJ10S04M3L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

239.16kb

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📄 Datasheet

Description:

Mosfets.

TJ10S04M3L Application

• Applications
• Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3)

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TJ10S04M3L

Toshiba Semiconductor

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