* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolut
TJ150F04M3L Datasheet (275.21 KB)
TJ150F04M3L
Toshiba ↗ Semiconductor
275.21 KB
Mosfets.
TJ150F04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F04M3L 1. Applications Automotive Relay Drivers DC-DC.
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