* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolut
TJ100F06M3L Datasheet (290.03 KB)
TJ100F06M3L
Toshiba ↗ Semiconductor
290.03 KB
Mosfets.
TJ100F06M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ100F06M3L
1. Applications
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* Automotive Relay Drivers DC-DC.
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