Datasheet4U.com

TJ100F06M3L Datasheet - Toshiba Semiconductor

TJ100F06M3L MOSFETs

TJ100F06M3L Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolut

TJ100F06M3L Datasheet (290.03 KB)

TJ100F06M3L Datasheet Preview — Preview of TJ100F06M3L PDF

TJ100F06M3L Datasheet Preview Page 2

TJ100F06M3L Datasheet Preview Page 3

Datasheet Details

Part number:

TJ100F06M3L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

290.03 KB

Description:

Mosfets.

📁 Related Datasheet

TJ100F04M3L MOSFETs (Toshiba Semiconductor)

TJ100A Current Transducer (Topstek)

TJ1051 CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER (HTC Korea)

TJ1052 CONSTANT VOLTAGE & CONSTANT CURRENT CONTROLLER (HTC Korea)

TJ10S04M3L MOSFETs (Toshiba Semiconductor)

TJ1117GS 1A L.D.O VOLTAGE REGULATOR (HTC)

TJ1117GSF 300mA L.D.O VOLTAGE REGULATOR (HTC)

TJ1118 Ultra Low Dropout Linear Regulator (HTC)

TAGS

TJ100F06M3L MOSFETs Toshiba Semiconductor

TJ100F06M3L Distributor