Datasheet Details
- Part number
- MHE1003N
- Manufacturer
- Freescale Semiconductor
- File Size
- 353.53 KB
- Datasheet
- MHE1003N-FreescaleSemiconductor.pdf
- Description
- RF Power LDMOS Transistor
MHE1003N Description
Freescale Semiconductor Technical Data Document Number: MHE1003N Rev.0, 7/2016 RF Power LDMOS Transistor N *Channel Enhancement *Mode.
MHE1003N Features
* Characterized with series equivalent large
* signal impedance parameters and common source S
* parameters
* Internally pre
* matched for ease of use
* Qualified for operation up to 28 Vdc
* Integrated ESD protection
* 150C case operating temperature
* 225
MHE1003N Applications
* operating in the 2450 MHz ISM band. Typical Performance: VDD = 26 Vdc, IDQ = 50 mA
Frequency (MHz)
Signal Type
Gps (dB)
PAE (%)
Pout (W)
2400
CW 14.0 61.5 230
2450
13.9 62.0 224
2500
11.5 61.8 214
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
2450
CW > 10:1 at all Phas
📁 Related Datasheet
📌 All Tags