Part number:
2SK3216-01
Manufacturer:
Fuji Electric
File Size:
142.91 KB
Description:
N-channel mosfet.
2SK3216-01 Datasheet (142.91 KB)
* High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless ot
2SK3216-01 Datasheet (142.91 KB)
2SK3216-01
Fuji Electric
142.91 KB
N-channel mosfet.
📁 Related Datasheet
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.
2SK3211 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211 - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211L - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211L - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211S - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211S - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3212 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ.
