2SK3214
Features
- Low on-resistance R DS =130mΩ typ.
- High speed switching
- 4V gate drive device can be driven from 5V source
Outline
TO- 220AB
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 200 ±20 10 40 10 10 6.6 50 150
- 55 to +150
Unit V V A A A A m J W °C °C
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 200 ±20
- - 1.0
- - 8
- -
- -
- -
- -
- Typ
- -
- -
- 130 150 13 1100 280 130 15 75 280 110 0.85 100 Max
- - ±10 10 2.5 170 190
- -
- -
- -
- -
- - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A,...
