Part number:
2SK3214
Manufacturer:
Hitachi Semiconductor
File Size:
27.43 KB
Description:
N-channel mosfet.
* Low on-resistance R DS =130mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3214 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sour
2SK3214
Hitachi Semiconductor
27.43 KB
N-channel mosfet.
📁 Related Datasheet
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.
2SK3211 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211 - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211L - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211L - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211S - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211S - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3212 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ.
