2SK3650-01L
Fuji Electric
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N-channel silicon power mosfet.
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2SK3650-01L - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3650-01L
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source O.
2SK3650-01S - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3650-01S
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source O.
2SK3650-01S - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low .
2SK3650-01SJ - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3650-01SJ
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source .
2SK3650-01SJ - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low .
2SK365 - N-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.
2SK3651-01R - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3651-01R
FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source O.
2SK3651-01R - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK3651-01R
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low drivi.
2SK3652 - N-channel Enhancement Mode MOSFET
(Guangdong Kexin Industrial)
SMD Type
Transistors IC
N-channel Enhancement Mode MOSFET 2SK3652
TO-263
+ 0 .1 1 .2 7 -0 .1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-r.
2SK3652 - N-channel enhancement mode MOSFET
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
3.3±0.3Product lifecyclennuaen.