2SK3652 Datasheet, Mosfet, Guangdong Kexin Industrial

2SK3652 Features

• Mosfet Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1

PDF File Details

Part number:

2SK3652

Manufacturer:

Guangdong Kexin Industrial

File Size:

64.79kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode mosfet.

TAGS

2SK3652

Guangdong Kexin Industrial

📁 Related Datasheet

2SK365 - N-Channel MOSFET (Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.

2SK3650-01L - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3650-01L FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source O.

2SK3650-01L - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low .

2SK3650-01S - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3650-01S FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source O.

2SK3650-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low .

2SK3650-01SJ - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3650-01SJ FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source .

2SK3650-01SJ - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low .

2SK3651-01R - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3651-01R FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source O.

2SK3651-01R - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low drivi.

2SK3652 - N-channel enhancement mode MOSFET (Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen.