2SK3652 - N-channel Enhancement Mode MOSFET

Guangdong Kexin Industrial

Datasheet Details

Part number	2SK3652
Manufacturer	Guangdong Kexin Industrial
File Size	64.79 KB
Description	N-channel Enhancement Mode MOSFET
Datasheet	2SK3652_GuangdongKexinIndustrial.pdf

Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperat.

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Published: Apr 27, 2011 |