2SK3653C Datasheet - NEC

2SK3653C MOSFET

The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 *0.05 time during power-on. In addition, because of its com.

2SK3653C Features

* Low noise:

* 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

* Containing a diode and high resistivity, short stability time is achieved during power-on.

* Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0.1 0.2 +0.1

2SK3653C Datasheet (153.85 KB)

2SK3653C Datasheet Preview — Preview of 2SK3653C PDF

Datasheet Details

Part number:

2SK3653C

Manufacturer:

NEC

File Size:

153.85 KB

Description:

Mosfet.

📁 Related Datasheet

2SK3653B N-Channel MOSFET (NEC)

2SK365 N-Channel MOSFET (Toshiba Semiconductor)

2SK3650-01L N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3650-01L N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

2SK3650-01S N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3650-01S N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

2SK3650-01SJ N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3650-01SJ N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

2SK3651-01R N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3651-01R N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

TAGS

2SK3653C MOSFET NEC

Image Gallery

2SK3653C Distributor