2SK3653C Datasheet (NEC)

2SK3653C, MOSFET

The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 *0.05 time during power-on.

In addition, because of its com

2SK3653C Features

* Low noise:

* 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

* Containing a diode and high resistivity, short stability time is achieved during power-on.

* Super thin thickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0.1 0.2 +0.1