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2SK365 N-Channel MOSFET

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Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Ap.

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Applications

* 2SK365 Unit: mm
* High breakdown voltage: VGDS =
* 50 V
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 30 V)
* Low RDS (ON): RDS (ON) = 80 Ω (typ. ) (IDSS = 5 mA)
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate curre

2SK365 Distributors

📁 Related Datasheet

2SK3650-01L 2SK3650-01S 2SK3650-01SJ 2SK3651-01R 2SK3652 2SK3653B

📌 All Tags

2SK365 N-Channel MOSFET Toshiba Semiconductor
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