2SK365 Datasheet, Mosfet, Toshiba Semiconductor

PDF File Details

Part number:

2SK365

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

178.72kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

2SK365 Application

• Applications 2SK365 Unit: mm
• High breakdown voltage: VGDS =
• 50 V
• High input impedance: IGSS =
• 1.0 nA (max) (

TAGS

2SK365

Toshiba Semiconductor

📁 Related Datasheet

2SK360 - N-Channel MOSFET (Hitachi Semiconductor)
2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25.

2SK3600-01L - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600-01SJ - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600L - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3600L FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R.

2SK3600S - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3600S FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R.

2SK3601-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low drivin.

2SK3602-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3602-01 FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On.

2SK3602-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3602-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalan.

2SK3603-01MR - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3603-01MR FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source .