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2SK365 Datasheet - Toshiba Semiconductor

2SK365 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction tem.

2SK365_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK365

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

178.72 KB

Description:

N-channel mosfet.

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2SK365 2SK365 N-Channel MOSFET Toshiba Semiconductor

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