Part number:
2SK363
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
690.47 KB
Description:
N-channel mosfet.
2SK363_ToshibaSemiconductor.pdf
Datasheet Details
2SK363_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK363
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
690.47 KB
Description:
N-channel mosfet.
2SK363, N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm High breakdown voltage: VGDS = 40 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power
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