2SK3636 - Silicon N-channel Power MOSFET

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Guangdong Kexin Industrial

Part number	2SK3636
Manufacturer	Guangdong Kexin Industrial
File Size	71.76 KB
Description	Silicon N-channel Power MOSFET
Datasheet	2SK3636 Datasheet
Additional preview pages of the 2SK3636 datasheet.

Avalanche energy capacity guaranteed: EAS Gate-source surrender voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power.

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Published: Mar 3, 2009 |