2SK3633 Datasheet - Toshiba Semiconductor

2SK3633 N-Channel MOSFET

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOS IV) www.DataSheet4U.com 2SK3633 Unit: mm Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 640 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gat.

2SK3633_ToshibaSemiconductor.pdf