2SK3730-01MR Datasheet - Fuji Electric

2SK3730-01MR N-CHANNEL SILICON POWER MOSFET

Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 251 Maximum Power Dis.

2SK3730-01MR Features

* High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof

* Outline Drawings [mm]

* Equivalent circuit schematic Drain (D)

* Applications Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S)

* Absolute Maxim

2SK3730-01MR-FujiElectric.pdf