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2SK3738 N-Channel Junction Silicon FET

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Description

Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Applications Application * * Package D.

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Datasheet Specifications

Part number
2SK3738
Manufacturer
Sanyo Semicon Device
File Size
52.31 KB
Datasheet
2SK3738_SanyoSemiconDevice.pdf
Description
N-Channel Junction Silicon FET

Features

* Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be small and slim. 3 0.75 0.6 0~0.1 1 2 0.5 0.5 1.6 0.2 0.1 0.1max 1 : Source 2 : Drain 3 : Gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain

Applications

* Application
* Package Dimensions unit : mm 2124 [2SK3738] 0.3 0.4 0.8 0.4 1.6 Impedance conversion. Infrared sensor. www. DataSheet4U. com

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