FMH23N60ES Datasheet, Mosfet, Fuji Electric

PDF File Details

Part number:

FMH23N60ES

Manufacturer:

Fuji Electric

File Size:

634.75kb

Download:

📄 Datasheet

Description:

N-channel silicon power mosfet. Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanch

TAGS

FMH23N60ES

Fuji Electric

📁 Related Datasheet

FMH23N60E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH23N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMH23N50E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.

FMH23N50E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
FMH23N50E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) ch.

FMH23N50ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
FMH23N50ES Super FAP-E3S series http://.fujielectric./products/semiconductor/ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Mainta.

FMH20N50E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.

FMH20N50E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH20N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMH20N50ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH20N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.

FMH20N60S1 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
FMH20N60S1 Super J-MOS series http://.fujielectric./products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features.

FMH20N60S1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variati.

FMH21N50ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMH21N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.