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FMH08N80E - N-Channel MOSFET

FMH08N80E Description

isc N-Channel MOSFET Transistor *.

FMH08N80E Features

* Drain Current ID= 8A@ TC=25℃
* Drain Source Voltage- : VDSS= 800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.45Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FMH08N80E Applications

* generally applied in high efficiency switch mode power supplies.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A

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Datasheet Details

Part number
FMH08N80E
Manufacturer
INCHANGE
File Size
227.82 KB
Datasheet
FMH08N80E-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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